Transistores de potencia RF GaN/SiC
Los transistores de potencia HEMT GaN/SiC son avanzados en tecnología de RF. Garantizan disipación de calor, fiabilidad y densidad de potencia.
13 MHZ TO 5.8 GHZ | UP TO 1.7KW
Turnkey ISM RF & MW Energy Solutions from Milexia partner Mini-Circuits
Plug ‘n play
Leave the amplifier design to us and focus on your end system
Modular
Easy to scale to higher power levels
Control
High-resolution frequency and power control at your fingertips