BeRex Launches a New Generation of Power PHEMT Transistors

New BCPxxxC Family of Power PHEMT FETs offers high reliability and performance efficiency. Santa Clara, CA. March 13, 2017.

BeRex a leading provider of high performance GaAs pHEMT (pseudomorphic high electron mobility transistor) and MESFET (metal–semiconductor field-effect transistor) devices today launches a new family of power PHEMT FETs (Field Effect Transistors), the “BCPxxxC Series”.

These new FETs offer improved current efficiency while maintaining excellent gain and power performance. This makes them ideal for C, X, Ku and K Band amplifiers. The new BCPxxxC FETs are available as bare-die with a nominal gate length of .25 μm and gate widths of 200 μm to 2400 μm; providing output power of up to one Watt at frequencies of up to 27 GHz.

These devices are designed in the U.S. and fabricated using state of the art metallization and SI3N4 passivation to assure the highest reliability suitable for commercial or military applications. The BCPxxxC PHEMT family includes the BCP020C, BCP030C, BCP040C, BCP060C, BCP080C, BCP120C, BCP160C and BCP240C. “The new BCPxxxC family of PHEMT chips represents our on-going commitment to providing PHEMT products for some of the world’s most demanding commercial and military applications.” says Dr. Alex Yoo Ph.D., President of BeRex, Inc.

The BeRex BCPxxxC Series of PHEMT chips is competitively priced. It is in production with samples available upon request. Additional information about these and other BeRex products is available on the company website: www.berex.com. BeRex, Inc., founded in 2007, is headquartered in Santa Clara, CA where it designs, manufactures, and markets a broad range of RF GaAs and SiGe devices for commercial and military clients worldwide.